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- PC3-10600 Memory Rating
- 204-pin
- Non-ECC, Unbuffered, CL9
- DDR3 SDRAM, DRAM
The TS512MSK64V3N-I is a 512 M x 64 bits DDR3-1333 2 rank SO-DIMM. The TS512MSK64V3N-I consists of 16 pcs 256 M x 8 bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64V3N-I is a dual in-line memory module and is intended for mounting into 204-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
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SODIMM, documentation
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Form Factor: SODIMMForm Factor: SO-DIMM 204-pinManufacturer Product Line: TranscendModel: Industrial GradeUpgrade Type: Generic
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Memory Attributes: CL9Memory Attributes: Dual RankMemory Attributes: Non-ECCMemory Attributes: UnbufferedMemory Rating: PC3-10600Pin Configuration: 204-pinRAM Technology: DDR3 SDRAMRAM Technology: DRAM
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This product is subject to our return policy. Please see our complete return policy for details.
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0.02 lbs
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Compliant Standards: RoHS
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32101600
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Warranty Period: Limited lifetime
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